Gan

Global $461M Gallium Nitride (GaN) Market Outlook and Forecast 2019-2029 - GaN Technology Holds a Strong Potential to Strategize and Upgrade Cellular Network Infrastructure

Retrieved on: 
Tuesday, November 26, 2019
Chemistry, Physical sciences, Chemical elements, Nitrides, LED lamps, Gallium nitride, Semiconductor device fabrication, Light-emitting diode, Gallium, Sapphire, Gan, Wafer

The global gallium nitride market research provides a detailed perspective regarding the different gallium nitride-based substrates, its applications, and its value and estimation, among others.

Key Points: 
  • The global gallium nitride market research provides a detailed perspective regarding the different gallium nitride-based substrates, its applications, and its value and estimation, among others.
  • The global gallium nitride market on the basis of the substrate type is segmented into GaN-on-Si, GaN-on-SiC, GaN-on-Sapphire, and others.
  • The GaN-on-Si segment is expected to maintain its dominance during the forecast period in the global gallium nitride market.
  • RF devices segment dominated the global gallium nitride market in 2018 and is expected to maintain its dominance through the forecast period.

2019 Power GaN Patent Landscape - GaN Power Market Forecast to be Worth Over $350M by 2024, Rising at a CAGR of 85% - ResearchAndMarkets.com

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Tuesday, November 26, 2019
Technology, Hardware, Semiconductor, Chemistry, Physical sciences, Nitrides, Gallium nitride, High-electron-mobility transistor, Gan, Fields of mathematics, Compound annual growth rate

Power GaN is entering mainstream consumer applications with the adoption of GaN HEMT by Chinese OEM Oppo in its 65W fast chargers.

Key Points: 
  • Power GaN is entering mainstream consumer applications with the adoption of GaN HEMT by Chinese OEM Oppo in its 65W fast chargers.
  • Yole Dveloppement projects that the GaN power market will be worth over $350M by 2024, with a compound annual growth rate (CAGR) of 85%.
  • Many firms have GaN power patenting activity, and a core set of strong companies, with strong technology and IP, are ready to dominate the GaN power market in coming years.
  • In this report, the publisher has thoroughly investigated the patent landscape related to GaN-based technologies and devices for power electronics applications.

Nexperia Launches High-efficiency GaN FET with Industry-leading Performance

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Tuesday, November 19, 2019
Technology, Hardware, Data management, Telecommunications, Physical sciences, Chemistry, Philips, Natural sciences, Gallium nitride, Nitrides, Nexperia, Gan

Nexperia is targeting high performance application segments including xEV, datacentres, telecom infrastructure, industrial automation and high-end power supplies.

Key Points: 
  • Nexperia is targeting high performance application segments including xEV, datacentres, telecom infrastructure, industrial automation and high-end power supplies.
  • More, this device is available in the industry-standard TO-247, allowing customers to benefit from exceptional GaN performance in a familiar package.
  • Our GaN is a technology that is ready for volume production, and with scalability to meet high volume applications.
  • The GAN063-650WSA GaN FET from Nexperia is the first in a portfolio of GaN devices that Nexperia is developing to address the automotive, communication infrastructure and industrial markets.

Strategy Analytics: RF GaN Revenue Growth Shows No Sign of Slowing

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Wednesday, November 13, 2019
Software, Networks, Internet, Hardware, Technology, Semiconductor, Mobile, Wireless, Other Technology, Internet of things, Mobile telecommunications, Technology, Telecommunications, Chemistry, Qorvo, Nitrides, 5G, Gallium nitride, Gan, 4G, Plextek RF Integration

The Strategy Analytics Advanced Semiconductor Applications (ASA) report RF GaN Market Forecast: 2018 - 2023 (Data Tables) forecasts that this growth will accelerate and RF GaN revenue will surpass $1.7 billion in 2023.

Key Points: 
  • The Strategy Analytics Advanced Semiconductor Applications (ASA) report RF GaN Market Forecast: 2018 - 2023 (Data Tables) forecasts that this growth will accelerate and RF GaN revenue will surpass $1.7 billion in 2023.
  • The drivers for this explosive growth will be continuing 4G and emerging 5G base station deployments, along with a variety of defense applications.
  • Base stations represent the largest source of GaN revenue, noted Eric Higham Director of the Advanced Semiconductor Applications (ASA) service and the Advanced Defense Systems (ADS) service.
  • This is also providing fuel for the GaN growth engine and should bode well for companies like Qorvo and Wolfspeed-A Cree Company.

Half-Bridge Evaluation Board from GaN Systems and ON Semiconductor Demonstrates Next Performance Leap in GaN

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Monday, November 4, 2019
Semiconductor devices, Electrical components, Semiconductors, Gallium nitride, Nitrides, High-electron-mobility transistor, Transistor, Gate driver, Gan, Monolithic microwave integrated circuit

OTTAWA and PHOENIX, Nov. 04, 2019 (GLOBE NEWSWIRE) -- GaN Systems , the global leader in GaN power semiconductors and ON Semiconductor , a world-leading supplier of power semiconductor ICs, today announced the availability of a high-speed, half-bridge GaN daughter board using GaN Systems 650 V, 30 A GaN E-HEMTs and ON Semiconductors award-winning NCP51820 high speed gate driver evaluation board.

Key Points: 
  • OTTAWA and PHOENIX, Nov. 04, 2019 (GLOBE NEWSWIRE) -- GaN Systems , the global leader in GaN power semiconductors and ON Semiconductor , a world-leading supplier of power semiconductor ICs, today announced the availability of a high-speed, half-bridge GaN daughter board using GaN Systems 650 V, 30 A GaN E-HEMTs and ON Semiconductors award-winning NCP51820 high speed gate driver evaluation board.
  • Features, which include 1+ MHz operation and a 200 V/ns CMTI rating, provide increased power density and improved performance with fast-switching GaN power transistors.
  • As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems.
  • By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world.

Navitas and Baseus Deliver the World's Smallest 65W 3-port Wall Charger

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Tuesday, October 29, 2019
Chemistry, Physical sciences, Natural sciences, Nitrides, Aarhus University, Navitas, Gallium, Gan

EL SEGUNDO, Calif., Oct. 29, 2019 /PRNewswire-PRWeb/ -- Navitas Semiconductor today announced its partnership with Baseus to introduce the "2C1A" 65W 3-port mobile wall charger with GaNFast (Gallium Nitride) power IC technology to achieve the world's smallest and lightest portable form-factor.

Key Points: 
  • EL SEGUNDO, Calif., Oct. 29, 2019 /PRNewswire-PRWeb/ -- Navitas Semiconductor today announced its partnership with Baseus to introduce the "2C1A" 65W 3-port mobile wall charger with GaNFast (Gallium Nitride) power IC technology to achieve the world's smallest and lightest portable form-factor.
  • "The market has begun to redefine Baseus, and Baseus has begun to redefine itself.
  • As the star product, the 2C1A GaN charger was launched based on Navitas' GaNFast technology, which makes it the smallest three-port charger in the world.
  • "Baseus' focus on exploiting leading-edge technology to drive world-class end-user experience mirrors Navitas' own strategy," said Gene Sheridan, CEO of Navitas, adding "We thank Mr.

RF GaN Patent Landscape Report, 2019 - Domination of American & Japanese Players, Weak Presence of Europeans, Numerous Chinese New Entrants

Retrieved on: 
Wednesday, September 18, 2019
Chemistry, Physical sciences, Gallium nitride, Nitrides, Gan, High-electron-mobility transistor

RF GaN intellectual property: domination of American and Japanese players, weak presence of Europeans, and numerous Chinese new entrants

Key Points: 
  • RF GaN intellectual property: domination of American and Japanese players, weak presence of Europeans, and numerous Chinese new entrants
    In recent years, the radiofrequency (RF) GaN market has grown impressively and has reshaped the RF power device industry landscape.
  • Intel and MACOM are currently the most active patent applicants for RF GaN, both especially for GaN-on-Silicon technology, and are today the main IP challengers in the RF GaN patent landscape.
  • CETC and Xidian University dominate the Chinese patent landscape with patents on GaN RF technologies targeting microwave and mm-wave applications.
  • New entrants in the GaN RF HEMT related patent landscape are mainly Chinese players like HiWafer, Sanan IC and Beijing Huajin Chuangwei Electronics.

Transphorm and Mouser Electronics Announce Global Distribution Agreement

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Tuesday, September 17, 2019
Manufacturing, Other Manufacturing, Electronic design automation, Technology, Chemistry, Electrical components, Physical sciences, Nitrides, Field-effect transistor, Gallium nitride, Gan, Transphorm, Mouser Electronics, Mouser Electronics, Transphorm

Transphorm Inc. the leader in the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductorstoday announced it has signed a global distribution agreement with Mouser Electronics , Inc., the authorized global distributor with the newest semiconductors and electronic components.

Key Points: 
  • Transphorm Inc. the leader in the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductorstoday announced it has signed a global distribution agreement with Mouser Electronics , Inc., the authorized global distributor with the newest semiconductors and electronic components.
  • Per the agreement, Mouser will distribute Transphorms JEDEC- and AEC-Q101-qualified GaN FETs and evaluation tools.
  • As of today, Mouser offers devices from Transphorms 900 V TO-220 and 650 V TO-247 and TO-220 GaN FETs.
  • Transphorm designs and manufactures the highest performance, highest reliability 650 V and 900 V GaN semiconductors for high-voltage power conversion applications.

Transphorm Adds Two More GaN FETs to Its Gen III Product Line

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Wednesday, September 11, 2019
Other Energy, Hardware, Consumer electronics, Energy, Technology, Other Manufacturing, Semiconductor, Engineering, Manufacturing, Chemistry, Physical sciences, Electrical components, Nitrides, Field-effect transistor, Transistor, Gallium nitride, Transphorm, Gallium, Gan

Transphorm Inc. the leader in the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductorstoday announced its first Gen III PQFN88 transistors.

Key Points: 
  • Transphorm Inc. the leader in the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductorstoday announced its first Gen III PQFN88 transistors.
  • Launched in June 2018 , Transphorms Gen III devices came onto the market as the highest quality, highest reliability [Q+R] GaN FETs available.
  • Further, adding PQFN88 devices to the existing list of Gen III TO-XXX FETs gives engineers an opportunity to explore GaN-driven surface mount applications using Transphorms latest technology.
  • The 650 V TP65H070LSG and TP65H070LDG (72 m) FETs are currently available for US$7.47 per 1000-unit quantities.

Applications & Markets for GaN in Power Electronics 2019: Exhaustive Analysis of How GaN Will Enter the Market - ResearchAndMarkets.com

Retrieved on: 
Tuesday, September 10, 2019
Semiconductor, Manufacturing, Technology, Engineering, Gallium nitride, Nitrides, Gan

The "Applications & Markets for GaN in Power Electronics 2019" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Applications & Markets for GaN in Power Electronics 2019" report has been added to ResearchAndMarkets.com's offering.
  • An exhaustive analysis of how GaN will enter the power electronics market, which applications will adopt it and which devices will be used, as well as which players are ready to move to GaN.
  • The researcher explored and interviewed potential users of GaN power devices, and get them to tell us both the good and the bad about GaN.
  • Don't stay still and get your copy of the best guide to GaN in power electronics to date.