Gan

3C＋1A World's Smallest & Lightest 100W GaN Charger "The CIO 3C1A"

Retrieved on: 
Tuesday, March 24, 2020
Chemistry, Physical sciences, Natural sciences, Nitrides, Laptop, Personal computing, USB hardware, Gallium nitride, Gan, MacBook, Gallium

The CIO 3C1A is a 100W multiple-port wall charger powered by GaN (Gallium Nitride), the latest semiconductor technology.

Key Points: 
  • The CIO 3C1A is a 100W multiple-port wall charger powered by GaN (Gallium Nitride), the latest semiconductor technology.
  • The "CIO 3C1A" will soon be an indispensable wall charger, since many Android devices, tablets, laptops and game consoles have installed USB-C ports, and it can charge them all!
  • The CIO 3C1Aprovides 100W of high power and overall convenience, and it is the same size as a MacBook Pro charger.
  • The CIO 3C1Awaslaunched on March 23: CIO 3C1A on Kickstarter
    View original content to download multimedia: http://www.prnewswire.com/news-releases/3c1a-worlds-smallest--lightest-1...

STMicroelectronics to Acquire Majority Stake in Gallium Nitride innovator Exagan

Retrieved on: 
Thursday, March 5, 2020
Chemistry, Physical sciences, Natural sciences, Nitrides, Gallium nitride, Indium nitride, Gan, Nitride, STMicroelectronics, Wide-bandgap semiconductor

Acquisition will accelerate STs GaN expertise, roadmap and business for high-frequency,

Key Points: 
  • Acquisition will accelerate STs GaN expertise, roadmap and business for high-frequency,
    Geneva, March 5, 2020 STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, today announced it has signed an agreement to acquire a majority stake in French Gallium Nitride (GaN) innovator Exagan.
  • Exagan will continue to execute its product roadmap and will be supported by ST in the deployment of its products.
  • The signed agreement also provides for the acquisition by ST of the remaining minority stake in Exagan 24 months after the closing of the acquisition of the majority stake.
  • Gallium Nitride (GaN) belongs to the family of wide bandgap (WBG) materials which include Silicon Carbide .

GAN plc Files for UK Scheme of Arrangement in Preparation for NASDAQ Listing

Retrieved on: 
Tuesday, March 3, 2020
Technology, Casino, Gaming, Entertainment, Online, Mobile Entertainment, Software, General Entertainment, Internet, Data management, Gan Chinese, Gan, Shareholders in the United Kingdom, Humans

If the conditions are satisfied and the Scheme is approved and implemented, GAN Bermuda will own the entire issued share capital of GAN UK and shareholders of GAN UK will become shareholders of GAN Bermuda.

Key Points: 
  • If the conditions are satisfied and the Scheme is approved and implemented, GAN Bermuda will own the entire issued share capital of GAN UK and shareholders of GAN UK will become shareholders of GAN Bermuda.
  • GAN UK shareholders at the Scheme record time will receive 0.25 GAN Bermuda shares and around 2.32 pence for each GAN UK share transferred under the Scheme (exact cash amount to be confirmed in the information circular).
  • If the Scheme has not become effective and implemented by 30 April 2020 (or such later date as GAN UK and GAN Bermuda may agree and the Court may allow), it will lapse, in which event there will not be a new parent company of GAN UK, and GAN UK shareholders will remain shareholders of GAN UK.
  • Conditional upon the Court sanctioning the Scheme, in accordance with the rules of the GAN Plc Share Option Plan 2013, the GAN Plc Share Option Plan 2017, the GAN Plc 2019 Equity Incentive Plan for US Employees and the GAN Plc Share Option Plan 2019 (GAN UK Share Schemes) the Board of GAN UK has determined that all outstanding options under the GAN UK Share Schemes (Options) will be exchanged for new options over GAN Bermuda Shares (GAN Bermuda Options).

Navitas at APEC 2020: Here Come the GaN Chargers!

Retrieved on: 
Friday, February 28, 2020
Battery charging, USB, Inventions, Electrical components, VOOC, USB hardware, Battery charger, Field-effect transistor, Gan, USB-C, Gallium nitride, Technology

Navitas GaN power ICs enable wall chargers for mobile devices to deliver up to 3x faster charging in half the size and weight compared to traditional slow, bulky silicon-based chargers.

Key Points: 
  • Navitas GaN power ICs enable wall chargers for mobile devices to deliver up to 3x faster charging in half the size and weight compared to traditional slow, bulky silicon-based chargers.
  • Recent GaN mobile chargers are featured on GaNFast.com , the industry's leading resource to discover GaN chargers and latest news media covering fast-charging USB-C, PD/PPS, VOOC, QC and other charging protocols.
  • About Navitas: Navitas Semiconductor Inc. is the world's first and only GaN Power IC company, founded in 2014 and based in El Segundo, CA, USA.
  • A proprietary process design kit monolithically integrates the highest performance GaN FETs with GaN logic and GaN analog circuits.

Global GaN Substrate Market - Industry Analysis, Size, Share, Growth, Trends & Forecast 2019-2027 - ResearchAndMarkets.com

Retrieved on: 
Wednesday, February 12, 2020
Technology, Semiconductor, Nitrides, Gallium nitride, Compound annual growth rate, Gan

The "GaN Substrate Market - Global Industry Analysis, Size, Share, Growth, Trends, and Forecast 2019 - 2027" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "GaN Substrate Market - Global Industry Analysis, Size, Share, Growth, Trends, and Forecast 2019 - 2027" report has been added to ResearchAndMarkets.com's offering.
  • The report also provides the compounded annual growth rate (CAGR) for the global GaN substrate market for the 2019-2027 period.
  • These indices serve as valuable tools for existing market players and for entities interested in participating in the global GaN substrate market.
  • How are advancements in GaN technology space having an impact on the global GaN substrate market?

Transphorm to Showcase Broad Market Adoption of High Voltage GaN Power at APEC 2020

Retrieved on: 
Wednesday, February 12, 2020
Semiconductor, Hardware, Manufacturing, Other Manufacturing, Technology, Chemistry, Physical sciences, Nitrides, Natural sciences, Gallium nitride, Transphorm, Gan, Reliability

Transphorm Inc. the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified high voltage gallium nitride (GaN) power semiconductorstoday previewed its APEC 2020 booth (#1514) presentations.

Key Points: 
  • Transphorm Inc. the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified high voltage gallium nitride (GaN) power semiconductorstoday previewed its APEC 2020 booth (#1514) presentations.
  • The company will showcase end products from more than five markets that leverage the inherent benefits offered by Transphorms GaN.
  • The customers behind the abovementioned end products use Transphorms GaN in a wide variety of power ranges.
  • Transphorm designs and manufactures the highest performance, highest reliability 650 V and 900 V GaN semiconductors for high-voltage power conversion applications.

Siemens Achieves Industry-Leading Performance With GaN Systems Power Transistors

Retrieved on: 
Tuesday, January 21, 2020
Chemistry, Physical sciences, Nitrides, Gallium nitride, Gan, Transistor

OTTAWA, Jan. 21, 2020 (GLOBE NEWSWIRE) -- GaN Systems , the global leader in GaN (gallium nitride) power semiconductors, today announced that Siemens is integrating part of its Simatic Micro-Drive product line with GaN Systems power semiconductors .

Key Points: 
  • OTTAWA, Jan. 21, 2020 (GLOBE NEWSWIRE) -- GaN Systems , the global leader in GaN (gallium nitride) power semiconductors, today announced that Siemens is integrating part of its Simatic Micro-Drive product line with GaN Systems power semiconductors .
  • With the integration of GaN Systems power transistors, this Siemens product line features industry-leading standards and benefiting customers by power density, efficiency and robustness.
  • The fundamental building block is the GaN power transistors made by GaN Systems.
  • As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems.

300 W Adapter Reference Design from GaN Systems and ON Semiconductor Highlights GaN Innovation and Performance in Consumer Devices

Retrieved on: 
Thursday, December 19, 2019
Physical sciences, Chemistry, Nitrides, Natural sciences, Gallium nitride, Gan, Transistor, Electric power system

System designers using this GaN-based reference design can reach power densities up to 32 watts per cubic inch.

Key Points: 
  • System designers using this GaN-based reference design can reach power densities up to 32 watts per cubic inch.
  • This reference design developed in collaboration with ON Semiconductor makes it easier and more cost effective to design as GaN gains popularity as a building block in the adapter market, said Charles Bailley, Senior Director, Worldwide Business Development at GaN Systems.
  • As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems.
  • By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world.

GaN Systems and SPARX advance GaN in Electric Vehicles

Retrieved on: 
Tuesday, December 17, 2019
SPARX Group, Gallium nitride, Gan, Electric vehicle, Sparx, Nature

OTTAWA, Dec. 17, 2019 (GLOBE NEWSWIRE) -- GaN Systems today announces that SPARX Group "Mirai Creation Fund II (Mirai fund)" has made an investment in GaN Systems.

Key Points: 
  • OTTAWA, Dec. 17, 2019 (GLOBE NEWSWIRE) -- GaN Systems today announces that SPARX Group "Mirai Creation Fund II (Mirai fund)" has made an investment in GaN Systems.
  • Its great to see so many automotive companies taking advantage of the benefits of our GaN as the industry shifts from internal combustion engines to Electric Vehicles.
  • As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems.
  • By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world.

Global Power GaN Patent Landscape Report 2019 with IP Profiles of 40 Key Players, Including Infineon, Panasonic, Toshiba, and More

Retrieved on: 
Wednesday, November 27, 2019
Electrical components, Semiconductors, Chemistry, Transistor, High-electron-mobility transistor, Gallium nitride, Gan, Cascode, Power electronics

Power GaN is entering mainstream consumer applications with the adoption of GaN HEMT by Chinese OEM Oppo in its 65W fast chargers.

Key Points: 
  • Power GaN is entering mainstream consumer applications with the adoption of GaN HEMT by Chinese OEM Oppo in its 65W fast chargers.
  • Many firms have GaN power patenting activity, and a core set of strong companies, with strong technology and IP, are ready to dominate the GaN power market in coming years.
  • In this report, the publisher has thoroughly investigated the patent landscape related to GaN-based technologies and devices for power electronics applications.
  • In the report we have identified key patents from key IP players and new entrants for both cascode and E-mode transistors.