Gan

Spigen PowerArc ArcStation Pro is the World's First and Smallest 20W GaNFast Charger for iPhone

Retrieved on: 
Monday, August 10, 2020
IOS, Mobile phones, Chemistry, Physical sciences, IPhone, Apple Inc., Gan, Gallium, Indium nitride

IRVINE, Calif. & DUBLIN, Aug. 10, 2020 /PRNewswire/ -- Spigen introduces the 20W PowerArc ArcStation Pro featuring gallium nitride (GaN) technology and Navitas Semiconductor's GaNFast power ICs.

Key Points: 
  • IRVINE, Calif. & DUBLIN, Aug. 10, 2020 /PRNewswire/ -- Spigen introduces the 20W PowerArc ArcStation Pro featuring gallium nitride (GaN) technology and Navitas Semiconductor's GaNFast power ICs.
  • The ArcStation Pro is the world's first and smallest 20W GaN fast charger specifically designed for Apple's new iPhone 12.
  • The Spigen PowerArc ArcStation Pro will be available on Amazon for US$19.99 in late August 2020, prior to the launch of the iPhone 12.
  • Spigen PowerArc is the latest innovative brand extension from Spigen , created to push the boundaries of modern charging technologies.

Silicon Chips Are History: Navitas Gallium Nitride Shrinks OPPO's Fast Charger by 12x

Retrieved on: 
Tuesday, August 4, 2020
Nitrides, Gallium nitride, Dell XPS, Gan, MacBook Pro, MacBook, Computers, Computer architecture, Consumer electronics

Measuring only 65.5 x 45.5 x 12 mm (36 cc), OPPO's 110W Mini fast charger is over 12x smaller than the 96W charger supplied with the Apple MacBook Pro 16".

Key Points: 
  • Measuring only 65.5 x 45.5 x 12 mm (36 cc), OPPO's 110W Mini fast charger is over 12x smaller than the 96W charger supplied with the Apple MacBook Pro 16".
  • With its ultra-thin 12 mm profile, this fast charger is now 20% lower profile than the Dell XPS 13 or MacBook Air.
  • The incredible savings in size and weight are possible thanks to gallium nitride (GaN), a next-generation semiconductor technology that runs up to 20x faster than old, slow silicon chips.
  • Navitas' GaNFast power ICs monolithically integrate GaN power, GaN analog and GaN logic circuits on the same chip, to enable faster, reliable, efficient operation.

$1.2 Billion Global GaN Power Devices Market Assessment 2020-2027 - GaN Power ICs Adjusted to Grow at a Revised CAGR of 15.2% due to COVID-19

Retrieved on: 
Wednesday, July 22, 2020
Gallium nitride, Nitrides, Gan, Analytics, Articles, Branches of science, Business

DUBLIN, July 22, 2020 /PRNewswire/ -- The "GaN Power Devices - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • DUBLIN, July 22, 2020 /PRNewswire/ -- The "GaN Power Devices - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.
  • The 213-page report presents concise insights into how the pandemic has impacted production and the buy side for 2020 and 2021.
  • This segment currently accounts for a 9.9% share of the global GaN Power Devices market.
  • In the global GaN Power Modules segment, USA, Canada, Japan, China and Europe will drive the 18.6% CAGR estimated for this segment.

GaN Power Devices Industry Report 2020-2027 - ResearchAndMarkets.com

Retrieved on: 
Tuesday, July 21, 2020
Technology, Hardware, Semiconductor, Gallium nitride, Nitrides, Gan, Segment

The "GaN Power Devices - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "GaN Power Devices - Global Market Trajectory & Analytics" report has been added to ResearchAndMarkets.com's offering.
  • GaN Power Discrete Devices, one of the segments analyzed in the report, is projected to grow at a 13.8% CAGR to reach US$523.5 Million by the end of the analysis period.
  • This segment currently accounts for a 9.9% share of the global GaN Power Devices market.
  • In the global GaN Power Modules segment, USA, Canada, Japan, China and Europe will drive the 18.6% CAGR estimated for this segment.

Navitas Drives The Future Of Power Semiconductors

Retrieved on: 
Wednesday, June 24, 2020
Inventions, Semiconductors, Chemistry, Semiconductor devices, Integrated circuit, Gan, Gallium nitride, Field-effect transistor, Power electronics

Now, GaN Power ICs with monolithic-integration of GaN FET, GaN digital and GaN analog circuits have driven a new generation of high-frequency, high-efficiency and very high-density power converters.

Key Points: 
  • Now, GaN Power ICs with monolithic-integration of GaN FET, GaN digital and GaN analog circuits have driven a new generation of high-frequency, high-efficiency and very high-density power converters.
  • Navitas Semiconductor Inc. is the world's first and only GaN Power IC company, founded in 2014.
  • GaN power ICs monolithically-integrate GaN power, GaN analog and GaN logic circuits to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets.
  • PCIM (Power Conversion Intelligent Motion) is Europe's leading meeting-point for experts out of the areas of Power Electronics and its applications in Intelligent Motion and Power Quality.

Homing Systems Launches World's Smallest 100W 4-output Fast Charger with GaNFast Technology

Retrieved on: 
Wednesday, May 13, 2020
Chemistry, Physical sciences, Natural sciences, Nitrides, Gallium nitride, Gan, Gallium, Semiconductor

EL SEGUNDO, Calif., May 13, 2020 /PRNewswire-PRWeb/ -- Homing Systems and Navitas Semiconductor announce the launch of the SlimQ "F100" 4-output fast charger on the Indiegogo campaign platform, already 1000% over-subscribed.

Key Points: 
  • EL SEGUNDO, Calif., May 13, 2020 /PRNewswire-PRWeb/ -- Homing Systems and Navitas Semiconductor announce the launch of the SlimQ "F100" 4-output fast charger on the Indiegogo campaign platform, already 1000% over-subscribed.
  • The F100 fast charger, with true power factor correction (PFC) functionality for world-wide use, uses Navitas GaNFast next-generation gallium nitride (GaN) semiconductor technology to shrink to the world's smallest size.
  • "We are seeing a paradigm shift in power technology," says Derek Liu, Founder and CEO of Homing Systems.
  • "With this device, we wanted to help consumers replace bulky, heavy, silicon-based laptop chargers with smaller and more efficient GaN-based devices.

Learn How to Design Artificial Intelligence, Robots, Drones, Autonomous Cars, and High-Quality Audio Systems at the State-of-the-Art Using Gallium Nitride (GaN) Technology

Retrieved on: 
Wednesday, April 22, 2020
Technology, Engineering, Communications, Manufacturing, Internet, Hardware, Training, Social media, Consumer electronics, Education, Chemistry, Physical sciences, Natural sciences, Nitrides, DC-to-DC converter, Electric power conversion, Gallium nitride, Lidar, Gallium, Gan

Efficient Power Conversion ( EPC ) Corporation has posted an update to its popular How to GaN video podcast series.

Key Points: 
  • Efficient Power Conversion ( EPC ) Corporation has posted an update to its popular How to GaN video podcast series.
  • The six videos included in the current release of the series provide practical examples to help designers employ GaN technology to create state-of-the-art DC-DC converters for AI servers and ultra-thin laptops, lidar for robots, drones, and autonomous cars, and audio systems with the highest quality acoustics possible.
  • EPC is the leader in enhancement mode gallium nitride-based power management devices and integrated circuits that provide even greater space, energy, and cost efficiency.
  • eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
    View source version on businesswire.com: https://www.businesswire.com/news/home/20200422005185/en/

Transphorm Introduces SuperGaN™ Power FETs with Launch of Gen IV GaN Platform

Retrieved on: 
Tuesday, April 14, 2020
Technology, Semiconductor, Other Technology, Telecommunications, Networks, Hardware, Electronic design automation, Data management, Consumer electronics, Transistors, Semiconductor devices, Chemistry, Nitrides, LED lamps, Gallium nitride, Transphorm, Field-effect transistor, Gan, Light-emitting diode, Reliability

Transphorm Inc. the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified high voltage gallium nitride (GaN) power semiconductors today announced availability of its Gen IV GaN platform.

Key Points: 
  • Transphorm Inc. the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified high voltage gallium nitride (GaN) power semiconductors today announced availability of its Gen IV GaN platform.
  • Related, Transphorm also announced today that Gen IV and future platform generations will be called SuperGaN technologies.
  • Our Gen IV GaN platform is creating new design opportunities in other power stages through better performance while increasing customers overall ROI.
  • Holding one of the largest Power GaN IP portfolio, Transphorm produces the industrys first JEDEC and AEC-Q101 qualified GaN FETs.

Transphorm and Microchip Combine High Reliability GaN and Digital Signal Processing Technology to Drive GaN Adoption

Retrieved on: 
Monday, April 6, 2020
Other Manufacturing, Hardware, Engineering, Consumer electronics, Technology, Semiconductor, Manufacturing, Other Technology, Transistors, Semiconductor devices, Inventions, Microcontrollers, Field-effect transistor, Gallium nitride, Microchip Technology, Reliability, PIC microcontrollers, Gan

The collaboration integrates a Microchip dsPIC33CK digital signal controller board with Transphorms 4 kW AC-to-DC bridgeless totem pole power factor correction (PFC) evaluation board , which features the companys latest Gen IV GaN technology.

Key Points: 
  • The collaboration integrates a Microchip dsPIC33CK digital signal controller board with Transphorms 4 kW AC-to-DC bridgeless totem pole power factor correction (PFC) evaluation board , which features the companys latest Gen IV GaN technology.
  • Transphorms Microchip collaboration is a gamechanger, said Philip Zuk, VP of Worldwide Technical Marketing and North American Sales, Transphorm.
  • Transphorm, Inc. ( www.transphormusa.com ), a global leader in the GaN revolution, designs and manufactures the highest performance, highest reliability high voltage GaN semiconductors for high-voltage power conversion applications.
  • Holding one of the largest Power GaN IP portfolio, Transphorm produces the industrys first JEDEC and AEC-Q101 qualified GaN FETs.

EPC Launches Update of Popular Video Podcast Series on Gallium Nitride (GaN) Power Transistors and Integrated Circuits

Retrieved on: 
Tuesday, March 31, 2020
Electronic design automation, Semiconductor, Engineering, Technology, Manufacturing, Hardware, Physical sciences, Chemistry, Natural sciences, Semiconductor devices, Gallium nitride, Transistor, Gan, Gallium, Integrated circuit, Electronic circuit, Transphorm, Alex Lidow

Efficient Power Conversion ( EPC ) Corporation has posted an update to its popular How to GaN video podcast series, These updated videos are based on the recently published third edition textbook, GaN Transistors for Efficient Power Conversion .

Key Points: 
  • Efficient Power Conversion ( EPC ) Corporation has posted an update to its popular How to GaN video podcast series, These updated videos are based on the recently published third edition textbook, GaN Transistors for Efficient Power Conversion .
  • This 14-part educational video podcast series is designed to provide power system design engineers a technical foundation and application-focused toolset on how to design more efficient power conversion systems using gallium nitride-based transistors and integrated circuits .
  • This series of short videos will help designers understand the exceptional benefits of GaN technology and the intricacies of incorporating GaN transistors and integrated circuits into power conversion systems.
  • EPC is the leader in enhancement mode gallium nitride-based power management devices and integrated circuits that provide even greater space, energy, and cost efficiency.