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Navitas Announces a New Era of Fast Charging at SemiExpo 2020

Retrieved on: 
Wednesday, November 25, 2020

DUBLIN, Nov. 25, 2020 /PRNewswire-PRWeb/ -- Navitas Semiconductor Limited today invited customers and industry partners to experience a new era of fast charging at the Semiexpo Shenzhen 2020 from December 8th 10th.

Key Points: 
  • DUBLIN, Nov. 25, 2020 /PRNewswire-PRWeb/ -- Navitas Semiconductor Limited today invited customers and industry partners to experience a new era of fast charging at the Semiexpo Shenzhen 2020 from December 8th 10th.
  • "GaN is the dominant solution in performance smartphone and laptop chargers today," said Charles (Jingjie) ZHA, VP and GM of Navitas China.
  • Navitas' Jason (Yupu) TAO will highlight the high performance and environmental benefits of gallium nitride when presenting "Navitas GaNFast: A New Era in Fast Charging" () in pavillion #2 of the "Fast Charging Exhibition" within SemiExpo, at 11.30am on December 9th.
  • Over 120 Navitas patents are issued or pending, and over 8 million GaNFast power ICs have been shipped with zero failures.

Transphorm to Participate at Upcoming November Financial Conferences

Retrieved on: 
Wednesday, November 11, 2020

Transphorm, Inc. (OTCQB: TGAN) a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion productstoday announced that senior management will participate at the following upcoming virtual financial conferences: Craig-Hallum Alpha Select Conference on Tuesday, November 17, 2020 and the Benchmark Discovery One on One Conference on Wednesday, November 18, 2020.

Key Points: 
  • Transphorm, Inc. (OTCQB: TGAN) a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion productstoday announced that senior management will participate at the following upcoming virtual financial conferences: Craig-Hallum Alpha Select Conference on Tuesday, November 17, 2020 and the Benchmark Discovery One on One Conference on Wednesday, November 18, 2020.
  • Portfolio managers and analysts can request a meeting with management by contacting their sales representative at the respective hosting firms or Transphorm investor relations.
  • Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications.
  • Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industrys first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices.

Transphorm Releases Latest High Voltage GaN Reliability Data

Retrieved on: 
Thursday, October 29, 2020

Transphorm, Inc. (OTCQB: TGAN)a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion productstoday released updated information regarding its GaN technologys quality and reliability (Q+R).

Key Points: 
  • Transphorm, Inc. (OTCQB: TGAN)a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion productstoday released updated information regarding its GaN technologys quality and reliability (Q+R).
  • Currently, Transphorms GaN platform offers a FIT rate of
  • To the best of our knowledge, Transphorm is currently the only high voltage GaN semiconductor company to report ELF, said Ron Barr, Vice President of Quality and Reliability, Transphorm.
  • Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications.

Transphorm President & Co-Founder, Dr. Primit Parikh, Interviewed by The Wall Street Resource

Retrieved on: 
Monday, October 26, 2020

Transphorm, Inc. (Transphorm or the Company) (OTCQB: TGAN) a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors, announced today the Companys President & Co-founder, Dr. Primit Parikh, was recently interviewed by Jeff Kone from The Wall Street Resource.

Key Points: 
  • Transphorm, Inc. (Transphorm or the Company) (OTCQB: TGAN) a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors, announced today the Companys President & Co-founder, Dr. Primit Parikh, was recently interviewed by Jeff Kone from The Wall Street Resource.
  • Founded in 2007, Transphorm is a global semiconductor company and a pioneering technology leader in wide-bandgap GaN power electronic devices for high-voltage power conversion applications.
  • Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications.
  • The Companys vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support.

Micross Components and EPC Sign Global Bare Die Distribution Agreement

Retrieved on: 
Friday, October 23, 2020

ORLANDO, Fla., Oct. 23, 2020 /PRNewswire-PRWeb/ --Micross Components, Inc. ("Micross"), the world's largest supplier of value-added bare die and a leading global mission-critical microelectronic components and services provider for high-reliability markets and Efficient Power Conversion Corporation (EPC), the world's leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs have signed a new agreement establishing Micross as an authorized worldwide supplier of EPC GaN products offered in Die Form.

Key Points: 
  • ORLANDO, Fla., Oct. 23, 2020 /PRNewswire-PRWeb/ --Micross Components, Inc. ("Micross"), the world's largest supplier of value-added bare die and a leading global mission-critical microelectronic components and services provider for high-reliability markets and Efficient Power Conversion Corporation (EPC), the world's leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs have signed a new agreement establishing Micross as an authorized worldwide supplier of EPC GaN products offered in Die Form.
  • "EPC's GaN technology solutions are a perfect complement to Micross' global expertise in providing mission-critical component and services to our hi-reliability customers," said Tony Hamby, Sr. VP of Global Die.
  • Micross ( http://www.micross.com ) is the global one-source provider of mission-critical microelectronic components and services, including Bare Die & Wafers, Advanced Interconnect Technology, Custom Packaging & Assembly, Component Modification Services, Electrical & Environmental Testing and Hi-Rel Products to manufacturers and users of semiconductor devices.
  • EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

Strategy Analytics: RF GaN Revenue Jumps 41 Percent in 2019

Retrieved on: 
Tuesday, September 29, 2020

Revenue from RF GaN-enabled devices increased by nearly 41 percent in 2019 and this revenue appears poised for strong future growth.

Key Points: 
  • Revenue from RF GaN-enabled devices increased by nearly 41 percent in 2019 and this revenue appears poised for strong future growth.
  • The Strategy Analytics Advanced Semiconductor Applications (ASA) and Advanced Defense Systems report RF GaN Market and Technology Forecast: 2019-2024 identifies developments in base station and defense applications as the biggest reason for the fast growth in RF GaN revenue.
  • The report forecasts that growth will continue, albeit at a lower rate, allowing RF GaN device revenue to double by 2024.
  • He closed by saying, Despite uncertainty created by COVID-19 disruptions, pressure on defense budgets and a US presidential election, I remain optimistic that RF GaN revenue will continue to show strong long term growth.

Transphorm to Participate at Upcoming Virtual Financial Conferences

Retrieved on: 
Thursday, August 27, 2020

Transphorm, Inc. (Transphorm or the Company) (OTCQB: TGAN)a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors, today announced that management will participate at the following financial conferences, which will be held as virtual events.

Key Points: 
  • Transphorm, Inc. (Transphorm or the Company) (OTCQB: TGAN)a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors, today announced that management will participate at the following financial conferences, which will be held as virtual events.
  • Portfolio managers and analysts can request a meeting with Transphorm management by contacting their sales representative at the respective hosting firms.
  • Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications.
  • Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industrys first JEDEC and AEC-Q101 qualified high voltage GaN FETs.

Chargeasap Omega: World's Most Powerful Multi-port GaN Fast Charger

Retrieved on: 
Tuesday, August 25, 2020

SYDNEY and DUBLIN, Aug. 25, 2020 /PRNewswire-PRWeb/ -- Chargeasap and Navitas Semiconductor today announced their partnership to deliver the world's most powerful gallium nitride (GaN) multi-output fast charger.

Key Points: 
  • SYDNEY and DUBLIN, Aug. 25, 2020 /PRNewswire-PRWeb/ -- Chargeasap and Navitas Semiconductor today announced their partnership to deliver the world's most powerful gallium nitride (GaN) multi-output fast charger.
  • Navitas' GaNFast power ICs monolithically integrate GaN power, GaN analog and GaN logic circuits on the same chip, to enable faster, reliable, efficient operation.
  • Chargeasap is a technology startup created in Sydney that focuses on highly innovative consumer electronics that improve our lives in simple ways.
  • GaN power ICs monolithically-integrate GaN power, GaN analog and GaN logic circuits to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets.

Spigen PowerArc ArcStation Pro is the World's First and Smallest 20W GaNFast Charger for iPhone

Retrieved on: 
Monday, August 10, 2020

IRVINE, Calif. & DUBLIN, Aug. 10, 2020 /PRNewswire/ -- Spigen introduces the 20W PowerArc ArcStation Pro featuring gallium nitride (GaN) technology and Navitas Semiconductor's GaNFast power ICs.

Key Points: 
  • IRVINE, Calif. & DUBLIN, Aug. 10, 2020 /PRNewswire/ -- Spigen introduces the 20W PowerArc ArcStation Pro featuring gallium nitride (GaN) technology and Navitas Semiconductor's GaNFast power ICs.
  • The ArcStation Pro is the world's first and smallest 20W GaN fast charger specifically designed for Apple's new iPhone 12.
  • The Spigen PowerArc ArcStation Pro will be available on Amazon for US$19.99 in late August 2020, prior to the launch of the iPhone 12.
  • Spigen PowerArc is the latest innovative brand extension from Spigen , created to push the boundaries of modern charging technologies.

Silicon Chips Are History: Navitas Gallium Nitride Shrinks OPPO's Fast Charger by 12x

Retrieved on: 
Tuesday, August 4, 2020

Measuring only 65.5 x 45.5 x 12 mm (36 cc), OPPO's 110W Mini fast charger is over 12x smaller than the 96W charger supplied with the Apple MacBook Pro 16".

Key Points: 
  • Measuring only 65.5 x 45.5 x 12 mm (36 cc), OPPO's 110W Mini fast charger is over 12x smaller than the 96W charger supplied with the Apple MacBook Pro 16".
  • With its ultra-thin 12 mm profile, this fast charger is now 20% lower profile than the Dell XPS 13 or MacBook Air.
  • The incredible savings in size and weight are possible thanks to gallium nitride (GaN), a next-generation semiconductor technology that runs up to 20x faster than old, slow silicon chips.
  • Navitas' GaNFast power ICs monolithically integrate GaN power, GaN analog and GaN logic circuits on the same chip, to enable faster, reliable, efficient operation.