Gallium nitride

JST Manufacturing Formally Introduces Ospray Single-Wafer Wet Processing Family

Retrieved on: 
Tuesday, November 14, 2023

MERIDIAN, Id., Nov. 14, 2023 (GLOBE NEWSWIRE) -- JST Manufacturing, Inc. , a leading provider of wet benches and chemical processing systems for semiconductor manufacturing, today formally introduced its Ospray family of single-wafer wet processing systems.

Key Points: 
  • MERIDIAN, Id., Nov. 14, 2023 (GLOBE NEWSWIRE) -- JST Manufacturing, Inc. , a leading provider of wet benches and chemical processing systems for semiconductor manufacturing, today formally introduced its Ospray family of single-wafer wet processing systems.
  • In production at multiple customer sites, the Ospray tools leverage JST’s extensive expertise in wet chemistries, positioning the company to become a complete supplier of wet processing solutions.
  • For U.S.-based customers, adding Ospray to its wet processing family further positions JST to benefit from heightened focus on domestic growth and onshoring in the U.S. semiconductor industry.
  • To learn more about Ospray and JST Manufacturing’s full line of wet processing solutions, please visit us in booth B2161 at SEMICON Europa, November 14-17, in Munich, Germany.

Navitas Semiconductor to Participate in Upcoming Investor Conferences

Retrieved on: 
Tuesday, November 14, 2023

TORRANCE, Calif., Nov. 14, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor , the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced participation in the upcoming investor conferences listed below.

Key Points: 
  • TORRANCE, Calif., Nov. 14, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor , the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced participation in the upcoming investor conferences listed below.
  • “It’s a very exciting time at Navitas as we launch four major new technology platforms across GaN and SiC.
  • We expect Navitas’ revenues to far exceed market growth rates in 2024 and for years to come.”
    November 15th: 1-on-1 meetings with Ron Shelton, CFO, and Stephen Oliver, VP Corp Mktg & IR.
  • November 28th: 1-on-1 meetings and fireside chat with Gene Sheridan, CEO, and Ron Shelton, CFO.

Navitas Semiconductor Announces Third Quarter 2023 Financial Results

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Thursday, November 9, 2023

TORRANCE, Calif., Nov. 09, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor Corporation (Nasdaq: NVTS), the industry leader in next-generation power semiconductors, today announced unaudited financial results for the third quarter ended September 30, 2023.

Key Points: 
  • TORRANCE, Calif., Nov. 09, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor Corporation (Nasdaq: NVTS), the industry leader in next-generation power semiconductors, today announced unaudited financial results for the third quarter ended September 30, 2023.
  • Gross Margin: GAAP gross margin for the third quarter of 2023 was 32.3%, impacted by inventory adjustments, compared to 3.8% in the third quarter of 2022 and 41.5% for the second quarter of 2023.
  • Non-GAAP gross margin for the third quarter of 2023 was 42.1% compared to 38.4% for the third quarter of 2022 and 41.5% for the second quarter of 2023.
  • Each of these non-GAAP financial measures are adjusted from GAAP results to exclude certain expenses which are outlined in the “Reconciliation of GAAP Results to Non-GAAP Financial Measures” tables below.

Transphorm and Weltrend Semiconductor’s New GaN System-In-Package Delivers Competitive Advantage by Supporting Multiple Power Levels

Retrieved on: 
Thursday, December 14, 2023

The board uses the companies’ SuperGaN® System-in-Package (SiP)—the WT7162RHUG24A —to achieve 92.7 percent efficiency in a Quasi-Resonant Flyback (QRF) topology.

Key Points: 
  • The board uses the companies’ SuperGaN® System-in-Package (SiP)—the WT7162RHUG24A —to achieve 92.7 percent efficiency in a Quasi-Resonant Flyback (QRF) topology.
  • Which is where Weltrend and Transphorm’s SuperGaN SiP excels,” said Philip Zuk, Senior Vice President, Business Development and Marketing, Transphorm.
  • Particularly as we deepen our footprint in the AC-to-DC power market,” said Wayne Lo, Vice President of Marketing, Weltrend Semiconductor.
  • Its use is intended to speed development of various high performance, low-profile power adapters charging smartphones, tablets, laptops, and other smart devices.

2023 Growth Opportunities for Compound Semiconductors in Automotive - ResearchAndMarkets.com

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Monday, December 4, 2023

The "Growth Opportunities for Compound Semiconductors in Automotive" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Growth Opportunities for Compound Semiconductors in Automotive" report has been added to ResearchAndMarkets.com's offering.
  • It explores the key drivers and challenges influencing the evolution of CS practices, offering valuable insights into the factors propelling its growth and the hurdles organizations must overcome.
  • In the automotive industry, CSs have several advantages over elemental semiconductors (e.g., silicon [Si]).
  • For example, because CSs have a wide band gap (WBG), they produce less heat than elemental semiconductors, thus losing less energy.

Transphorm Releases Two Battery Charger Reference Designs Ideal for Two- and Three-Wheeled Electric Vehicles

Retrieved on: 
Thursday, November 30, 2023

Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, today announced availability of two new reference designs for electric vehicle (“EV”) charging applications.

Key Points: 
  • Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, today announced availability of two new reference designs for electric vehicle (“EV”) charging applications.
  • The reference designs are intended to enable high volume production of chargers for 2- and 3-wheel EVs, of which over 14 million and over 45 million are sold annually in India and China respectively.
  • The reference designs can also be used for a variety of applications including fast charging, LED dimmable drivers, gaming consoles, and high-performance laptops.
  • Note: The 300 W reference design includes an additional PWM input port for requesting output current levels lower than rated output value, enabling further flexibility for all battery chemistries.

StratEdge Presents and Exhibits at the American Society of Mechanical Engineers (ASME) InterPACK 2023 Conference

Retrieved on: 
Thursday, November 30, 2023

This presentation delves into crucial aspects of packaging, materials, and assembly methodologies significant to Gallium Nitride (GaN) devices.

Key Points: 
  • This presentation delves into crucial aspects of packaging, materials, and assembly methodologies significant to Gallium Nitride (GaN) devices.
  • InterPACK is the primary annual technical conference of the Electronics and Photonics Packaging Division (EPPD) of the ASME.
  • The conference served as an enriching platform for the exchange of state-of-the-art knowledge encompassing research, development, manufacturing, and applications in packaging.
  • The conference marked a successful culmination of this year's networking and events for StratEdge.

Transphorm and Allegro MicroSystems Team Up to Increase GaN Power System Performance for High Power Applications

Retrieved on: 
Wednesday, November 15, 2023

Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, and Allegro MicroSystems, Inc. (“Allegro”) (Nasdaq: ALGM), a global leader in power and sensing semiconductor technology for motion control and energy-efficient systems, today announced a collaboration including Transphorm’s SuperGaN® FETs and Allegro’s AHV85110 Isolated Gate Driver to enable the expansion of GaN power system design for high power applications.

Key Points: 
  • Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, and Allegro MicroSystems, Inc. (“Allegro”) (Nasdaq: ALGM), a global leader in power and sensing semiconductor technology for motion control and energy-efficient systems, today announced a collaboration including Transphorm’s SuperGaN® FETs and Allegro’s AHV85110 Isolated Gate Driver to enable the expansion of GaN power system design for high power applications.
  • SuperGaN FETs are used in multiple commercial products, including higher power systems where they are proven to notably increase reliability, power density, and efficiency.
  • Allegro’s self-powered, single-channel isolated gate driver IC is optimized for driving GaN FETs in multiple applications and circuits.
  • The AHV85110 is proven to enhance driver efficiency by as much as 50% compared to competitive gate drivers.

OKI Develops GaN Lifting off/Bonding Technology on QST Substrates of Shin-Etsu Chemical

Retrieved on: 
Monday, November 13, 2023

This technology enables the vertical conduction of GaN and is expected to contribute to the realization and commercialization of vertical GaN power devices capable of controlling large currents.

Key Points: 
  • This technology enables the vertical conduction of GaN and is expected to contribute to the realization and commercialization of vertical GaN power devices capable of controlling large currents.
  • On the other hand, OKI's CFB technology can lift off only the GaN functional layer from the QST substrate while maintaining high device characteristics.
  • Through this, the combined technologies of Shin-Etsu Chemical and OKI solve the above two major challenges, paving the way for the social implementation of vertical GaN power devices.
  • In the future, the two companies will contribute to the realization and widespread use of vertical GaN power devices through Shin-Etsu Chemical's provision of QST substrates or GaN grown QST substrates to companies manufacturing GaN devices and OKI's provision of CFB technology through partnering and licensing.

Guerrilla RF Reports Third Quarter 2023 Results

Retrieved on: 
Monday, November 13, 2023

Guerrilla RF, Inc. (OTCQX: GUER), a leading provider of state-of-the-art radio frequency and microwave communications solutions, today announced its financial and operating results for the third quarter ended September 30, 2023.

Key Points: 
  • Guerrilla RF, Inc. (OTCQX: GUER), a leading provider of state-of-the-art radio frequency and microwave communications solutions, today announced its financial and operating results for the third quarter ended September 30, 2023.
  • View the full release here: https://www.businesswire.com/news/home/20231113396653/en/
    Guerrilla RF, Inc., a leading provider of state-of-the-art radio frequency and microwave communications solutions, today announced its financial and operating results for the third quarter ended September 30, 2023.
  • Product revenue growth for the third quarter of fiscal 2023 increased 65.9% from the third quarter of fiscal 2022.
  • Operating loss for the third quarter of fiscal 2023 was $3.7 million as compared to $3.3 million for the third quarter of fiscal 2022.