Gallium nitride

Welcome to “Planet Navitas” at Premier Power Electronics Conference, APEC 2024

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Friday, January 26, 2024
Research, Navitas, APEC, Entertainment center, AHB, Electronics, Bridge, Exhibition, Conference, EV, Calendar, Transport, Silicon carbide, ICS, Gallium nitride

Since its inception in 1985, the Applied Power Electronics Conference (APEC) has become the world’s premier event in power electronics, with high-caliber, peer-reviewed technical content from industry and academia.

Key Points: 
  • Since its inception in 1985, the Applied Power Electronics Conference (APEC) has become the world’s premier event in power electronics, with high-caliber, peer-reviewed technical content from industry and academia.
  • The APEC 2016 keynote by Dan Kinzer, COO / CTO and co-founder, was the public debut for start-up Navitas and GaNFast power ICs.
  • Examples range from TV power to home-appliance motors and compressors, EV charging, solar/micro-grid installations, and on to data center power systems.
  • “APEC is a significant event in the power industry calendar, with an intense schedule of customer discussions on new technologies and systems,” said Mr. Kinzer.

Navitas and SHINRY Accelerate New-Energy Vehicle Developments with Next-Gen Power Semiconductors

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Thursday, January 25, 2024
Silicon, XPENG, Research, BYD, BAIC, Renewable energy, GM, Geely, Hyundai, EV, Silicon carbide, ICS, NEVS, NEV, Engineering, Gallium nitride

On January 16th, 2024, Peter (Jingjun) Chen, COO of SHINRY, along with Navitas’ Gene Sheridan, CEO and Navitas’ Charles (Yingjie) Zha, VP and GM plus other senior executives attended the joint lab’s opening ceremony at SHINRY headquarters in Shenzhen.

Key Points: 
  • On January 16th, 2024, Peter (Jingjun) Chen, COO of SHINRY, along with Navitas’ Gene Sheridan, CEO and Navitas’ Charles (Yingjie) Zha, VP and GM plus other senior executives attended the joint lab’s opening ceremony at SHINRY headquarters in Shenzhen.
  • The joint lab brings together experienced, highly-professional engineers from Navitas and SHINRY to build efficient, collaborative R&D platforms.
  • “As an advanced supplier in the field, Navitas will assist in creating more advanced, energy-efficient, and higher-efficiency power system products.
  • I believe the establishment of this joint lab will comprehensively accelerate the design and market launch of SHINRY's products and further enhance the market competitiveness of SHINRY products.”
    “We are excited to join with SHINRY to establish a new lab for next-gen power semiconductors, assisting SHINRY in creating advanced power systems.” said Gene Sheridan, Navitas’ co-founder & CEO.

Silvaco Joins GaN Valley™, a Wide Bandgap Semiconductor Innovation Ecosystem in Europe

Retrieved on: 
Monday, January 29, 2024
Software, Technology, Artificial Intelligence, Semiconductor, Senior, Artificial intelligence, IP, EDA, Electronics, AI, Ecosystem, TCAD, GM, Environment, SPICE, Gallium nitride, Mobile phone

Gallium nitride is a wide bandgap semiconductor known for its high electron mobility and is commonly used in power electronics due to its superior performance characteristics.

Key Points: 
  • Gallium nitride is a wide bandgap semiconductor known for its high electron mobility and is commonly used in power electronics due to its superior performance characteristics.
  • GaN ValleyTM is a technology hub in Europe specializing in gallium nitride technologies.
  • “GaN ValleyTM is a new and unique ecosystem developing in Europe, currently having close to 60 members active along the GaN value chain in Europe.
  • Through connecting and collaboration, GaN ValleyTM will accelerate innovation and business development of a GaN-based industry in Europe and beyond.

KYOCERA SLD Laser Demonstrates High-speed Underwater Wireless Optical Communication and Custom GaN Laser Capabilities

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Thursday, January 25, 2024
Semiconductor, Automotive Manufacturing, Security, Aerospace, Manufacturing, Defense, Maritime, Nanotechnology, Transport, Other Defense, Telecommunications, Networks, Medical Devices, Hardware, Consumer Electronics, Technology, Mobile, Wireless, Health, Engineering, IATF, The Wall Street Journal, Laser, Kyocera, Photonics, IEC, City, Data-rate units, KYOCERA, Booth, Li-Fi, Ceramic, Exhibition, KSLD, IATF 16949, Therapy, VR, Projection, UL, Night vision, Gallium nitride, Metal, Modularity, Atmosphere

KYOCERA SLD Laser, Inc. (KSLD), a world leader in commercialization of laser light sources, has announced the demonstration of a high-speed, bidirectional link for Underwater Wireless Optical Communication (UWOC) and custom-chip gallium nitride (GaN) laser capabilities.

Key Points: 
  • KYOCERA SLD Laser, Inc. (KSLD), a world leader in commercialization of laser light sources, has announced the demonstration of a high-speed, bidirectional link for Underwater Wireless Optical Communication (UWOC) and custom-chip gallium nitride (GaN) laser capabilities.
  • KSLD is pioneering LiFi innovations and will demonstrate a high-speed, bidirectional link powered by its novel GaN based blue laser to enable UWOC.
  • KSLD will also demonstrate its novel custom-chip laser capabilities which are being introduced to the market for customers needing specialized GaN device-based products.
  • KYOCERA SLD Laser will host meetings in person at Photonics West 2024 in Booth 1667 and virtually by appointment.

Transphorm Announces Two 4-Lead TO-247 Devices, Expanding Product Portfolio for High Power Server, Renewable, Industrial Power Conversion

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Wednesday, January 17, 2024
Hardware, Semiconductor, Alternative Energy, Data Management, Energy, Manufacturing, Consumer Electronics, Technology, Other Manufacturing, Other Technology, Telecommunications, Software, Networks, Other Energy, Mobile, Wireless, Engineering, Silicon, FET, Calendar, Silicon carbide, Hertz, Gallium nitride, Electronics

Transphorm, Inc. (Nasdaq: TGAN), the global leader in robust GaN power semiconductors, today announced availability of two new SuperGaN® devices in a 4-lead TO-247 package (TO-247-4L).

Key Points: 
  • Transphorm, Inc. (Nasdaq: TGAN), the global leader in robust GaN power semiconductors, today announced availability of two new SuperGaN® devices in a 4-lead TO-247 package (TO-247-4L).
  • The new products will run on Transphorm’s well-established GaN-on-Silicon substrate manufacturing process that is cost-effective, reliable, and well-suited for high volume manufacturing on silicon production lines.
  • The 50 mOhm TP65H050G4YS FET is currently available while the 35 mOhm TP65H035G4YS FET is sampling and slated for release in calendar Q1’2024.
  • The TO-247-4L devices offer the same robustness, designability, and drivability with the following core specifications:

JEDEC JC-14.7 Subcommittee Broadens Focus to Include Radio Frequency Technologies

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Wednesday, January 17, 2024
Electronic Design Automation, Semiconductor, Consumer Electronics, Technology, Mobile, Wireless, Hardware, RF, MMW, Knowledge, JEDEC, Radio, Radar, IRPS, Gallium arsenide, Gallium nitride, Printed circuit board

JEDEC Solid State Technology Association , the global leader in the development of standards for the microelectronics industry, today announced that the JC-14.7 Subcommittee has expanded its scope to include standards for radio frequency (RF) technologies.

Key Points: 
  • JEDEC Solid State Technology Association , the global leader in the development of standards for the microelectronics industry, today announced that the JC-14.7 Subcommittee has expanded its scope to include standards for radio frequency (RF) technologies.
  • The subcommittee is set to meet on Friday, April 19th, 2024 near Dallas, Texas, the day after the International Reliability Physics Symposium (IRPS).
  • Industry stakeholders are encouraged to participate, and interested companies are invited to contact the JEDEC office to join the association and engage with JC-14.7.
  • “The expansion of JC-14.7’s scope reflects JEDEC’s commitment to evolving alongside the dynamic microelectronics industry,” said Purushothaman Srinivasan, Chair of the JC-14.7 Subcommittee.

Inventus Power introduces new line of Universal Power Supplies with GaN technology

Retrieved on: 
Thursday, January 25, 2024
Gallium nitride, Universal power, OEM, IEC, Mouser Electronics, IEC 60601, Risk, Water, Safety, Conducted emissions, Medicine, EMI, Silicon carbide, EMC, Arrow Electronics, Dust, Allied Electronics, Semiconductor, Medical device

WOODRIDGE, Ill., Jan. 25, 2024 /PRNewswire/ -- Inventus Power (inventuspower.com), a global leader in battery and power systems, today announced the launch of its new line of Universal Power Supplies with GaN technology, designed for both Medical & ITE applications. This new platform of power supplies is part of Inventus Power's Elpac brand which is known in the industry for quality and reliability. All new models in the lineup feature Gallium Nitride (GaN) semiconductors which enable better overall performance within a smaller, lighter footprint compared to legacy models containing silicon carbide (SiC). Inventus Power's initial offering includes a 65W fixed output voltage series as well as an adjustable voltage power delivery product, the XWA065 Series and XWA065 PD Series respectively. All of the models in both series fully comply with medical and commercial standards IEC 60601 and IEC 62368.

Key Points: 
  • WOODRIDGE, Ill., Jan. 25, 2024 /PRNewswire/ -- Inventus Power (inventuspower.com), a global leader in battery and power systems, today announced the launch of its new line of Universal Power Supplies with GaN technology, designed for both Medical & ITE applications.
  • This new platform of power supplies is part of Inventus Power's Elpac brand which is known in the industry for quality and reliability.
  • Inventus Power's initial offering includes a 65W fixed output voltage series as well as an adjustable voltage power delivery product, the XWA065 Series and XWA065 PD Series respectively.
  • These power supplies enhance system-level EMI/EMC performance, minimizing disruptions, malfunctions, and false readings in critical medical applications."

Vention's Global Outreach Takes a Leap Forward at CES 2024

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Thursday, January 18, 2024
CES, Observation, Consumer Electronics Show, Electronics, Gallium nitride, Vertical

LAS VEGAS, Jan. 17, 2024 /PRNewswire/ -- Vention, a leading consumer electronics and connectivity solutions company, showcased its cutting-edge innovations and marked a significant milestone in global outreach at the Consumer Electronics Show (CES) 2024.

Key Points: 
  • LAS VEGAS, Jan. 17, 2024 /PRNewswire/ -- Vention, a leading consumer electronics and connectivity solutions company, showcased its cutting-edge innovations and marked a significant milestone in global outreach at the Consumer Electronics Show (CES) 2024.
  • The company's presence at CES 2024 not only highlighted its technological prowess but also underscored its dedication to shaping the future of consumer electronics.
  • Global Collaborations: As part of our expansion strategy, Vention announced key partnerships and collaborations with many partners.
  • As Vention's global outreach takes a leap forward, the company remains focused on its mission to elevate customers' audio and video experiences.

SiC-On-Insulator and Other Substrates Market worth $149 million by 2029- Exclusive Report by MarketsandMarkets™

Retrieved on: 
Tuesday, January 16, 2024
Mobile, Electronics, Coherent Corp., Gallium nitride, Energy, Silicon, RF, Frequency band, Consumer, Power module, Consumer electronics, Amplifier, Component, STMicroelectronics, Transport, Statistics, Power semiconductor device, Gallium arsenide, ICT, Silicon carbide, Region

Conductive SiC Substrates are expected to account for the highest CAGR of the SiC-on-insulator and other substrates market during the forecast period.

Key Points: 
  • Conductive SiC Substrates are expected to account for the highest CAGR of the SiC-on-insulator and other substrates market during the forecast period.
  • Power devices are projected to register the highest CAGR in SiC-on-insulator and other substrates market during the forecast period.
  • As a result, power devices are projected to register the highest CAGR in the SiC-on-insulator and other substrates market during the forecast period.
  • These European semiconductor manufacturers actively participate in the key developments of SiC-on-insulator and other substrates market, contributing towards the regional market growth of SiC-on-insulator and other substrates.

SiC-On-Insulator and Other Substrates Market worth $149 million by 2029- Exclusive Report by MarketsandMarkets™

Retrieved on: 
Tuesday, January 16, 2024
Mobile, Electronics, Coherent Corp., Gallium nitride, Energy, Silicon, RF, Frequency band, Consumer, Power module, Consumer electronics, Amplifier, Component, STMicroelectronics, Transport, Statistics, Power semiconductor device, Gallium arsenide, ICT, Silicon carbide, Region

Conductive SiC Substrates are expected to account for the highest CAGR of the SiC-on-insulator and other substrates market during the forecast period.

Key Points: 
  • Conductive SiC Substrates are expected to account for the highest CAGR of the SiC-on-insulator and other substrates market during the forecast period.
  • Power devices are projected to register the highest CAGR in SiC-on-insulator and other substrates market during the forecast period.
  • As a result, power devices are projected to register the highest CAGR in the SiC-on-insulator and other substrates market during the forecast period.
  • These European semiconductor manufacturers actively participate in the key developments of SiC-on-insulator and other substrates market, contributing towards the regional market growth of SiC-on-insulator and other substrates.