Gallium nitride

Soctera Demonstrates Superior Thermal Performance in GaN HEMTs For Next-Generation Telecommunications and Radar Solutions

Retrieved on: 
Friday, February 9, 2024
Telecommunications, Temperature, Gallium, HEMT, IQE, Gallium nitride

ITHACA, N.Y., Feb. 9, 2024 /PRNewswire/ -- Soctera, a developer of III-nitride power amplifiers, has demonstrated high-electron-mobility transistors (HEMTs) exhibiting a peak surface temperature rise of just 59 °C while dissipating 10.4 W/mm. Typical gallium nitride (GaN) HEMTs reach the standard operating temperature limit of 225 °C when dissipating approximately 5 W/mm. This dramatic improvement in thermal performance could substantially reduce thermal solution costs, enhance reliability, and increase peak power output in next-generation telecommunications (5G and beyond) and defense radar arrays.

Key Points: 
  • Typical gallium nitride (GaN) HEMTs reach the standard operating temperature limit of 225 °C when dissipating approximately 5 W/mm.
  • This dramatic improvement in thermal performance could substantially reduce thermal solution costs, enhance reliability, and increase peak power output in next-generation telecommunications (5G and beyond) and defense radar arrays.
  • Towards building out end-to-end commercial manufacturing, Soctera has started HEMT fabrication with a DoD-approved GaN foundry.
  • Soctera's technology maturation efforts were recently bolstered with $750,000 in non-dilutive funding awarded by the Defense Business Accelerator pitch competition.

Global Compound Semiconductors in Automotive Industry Report 2023: Burgeoning Opportunities in Strategic Partnerships Between SiC and GaN Semiconductor Suppliers and Supply Chain Consolidation

Retrieved on: 
Friday, February 9, 2024
CS, Plant, Lidar, Germanium, Gallium arsenide, Silicon, EV, Entegris, AVS, CSS, Indium phosphide, Carbon sequestration, Government, WBG, Gallium nitride

DUBLIN, Feb. 8, 2024 /PRNewswire/ -- The "Growth Opportunities for Compound Semiconductors in Automotive" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • DUBLIN, Feb. 8, 2024 /PRNewswire/ -- The "Growth Opportunities for Compound Semiconductors in Automotive" report has been added to ResearchAndMarkets.com's offering.
  • It delves into the key drivers and challenges influencing CS initiatives, encompassing regulatory frameworks, market dynamics, and economic considerations.
  • A compound semiconductor (CS) consists of two or more elements from different groups in the periodic table, such as gallium arsenide (GaAs), GaN, indium phosphide (InP), and silicon germanium.
  • In the automotive industry, CSs have several advantages over elemental semiconductors (e.g., silicon [Si]).

Infineon and Worksport collaborate to reduce weight and cost of portable power stations with GaN

Retrieved on: 
Wednesday, February 7, 2024
Carbon, Infineon Technologies, Automotive industry, Gallium nitride, CO2, Silicon, Carbon dioxide, WKSP, Semiconductor, Video game

Worksport will use Infineon’s GaN power semiconductors GS-065-060-5-B-A in the converters for its portable power stations to increase efficiency and power density.

Key Points: 
  • Worksport will use Infineon’s GaN power semiconductors GS-065-060-5-B-A in the converters for its portable power stations to increase efficiency and power density.
  • Enabled by Infineon’s GaN transistors, the power converters will be lighter and smaller in size with reduced system costs.
  • In addition, Infineon will support Worksport in the optimization of circuits and layout design to further reduce size and increase power density.
  • “With our GaN power semiconductors we enable Worksport to create the next generation portable power stations that users require.”
    Infineon’s GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor.

Allegro MicroSystems Introduces High-Bandwidth Current Sensor Technologies Enabling High-Performance Power Conversion

Retrieved on: 
Tuesday, February 6, 2024
Silicon carbide, SNR, Signal-to-noise ratio, Allegro, Noise, Temperature, Gallium nitride, Electric motor

Current high-power-density GaN and SiC FET charging and power infrastructures demand high-speed, low-loss devices to ensure efficiency and reliability.

Key Points: 
  • Current high-power-density GaN and SiC FET charging and power infrastructures demand high-speed, low-loss devices to ensure efficiency and reliability.
  • To address these challenges, Allegro has introduced two high-bandwidth current sensors – the ACS37030 and ACS37032 – designed to provide efficiency and high-performance with reduced design time and board space.
  • They employ a dual signal paths approach, with one path capturing low-frequency and DC current using Hall-effect elements and the other path capturing high-frequency current data through an inductive coil.
  • Balances cost considerations while minimizing design complexity: Simplifies designs and facilitates easy-to-design, cost-optimized, high-power, high-frequency switching power conversion for GaN and SiC devices.

Transphorm at APEC 2024: SuperGaN Innovation for Low to High Power Applications

Retrieved on: 
Tuesday, February 6, 2024
Apps, Applications, Mobile, Wireless, Technology, Security, Software, Networks, Internet, Hardware, Data Management, Artificial Intelligence, Designability, Silicon carbide, Physics, Microchip Technology, Booth, AEC, APEC, Transphorm, Gallium nitride, FIT, Shodan (website), Technical, MOSFET, Silicon, FET, FAE, JEDEC, Electric motor

Silver Partner Transphorm, Inc. (Nasdaq: TGAN)—a global leader in robust GaN power semiconductors—announced today that its APEC 2024 showcase will underscore the company’s continued leadership in broad spectrum (low to high power) GaN power conversion.

Key Points: 
  • Silver Partner Transphorm, Inc. (Nasdaq: TGAN)—a global leader in robust GaN power semiconductors—announced today that its APEC 2024 showcase will underscore the company’s continued leadership in broad spectrum (low to high power) GaN power conversion.
  • This year, Transphorm will highlight major innovation milestones to include the industry’s first 1200 V GaN-on-Sapphire device model and leading short circuit robustness .
  • Reliability: Still leading the industry with a current FIT rate of
  • Transphorm today supports the largest range of power conversion requirements (45 W to 10+ kW) across the widest range of power applications.

Four New Members Join Cycle Capital's Industrial Expert Advisory Committee

Retrieved on: 
Monday, February 5, 2024
Senior, Central Waqf Council, University, Mechanical, Qualcomm, Doctor of Philosophy, Intel, Semiconductor, IEAC, Marvell Technology, Harvard Business School, ICAM, Terra Firma Capital Partners, Mechanical engineering, Acquisition, Silicon, Business, Gallium nitride, Kantou, Cyprus, Harvard University, Infineon Technologies, Accenture, Banchory, Like a Boss (film), Cavium, Electronics, Merrill (company), MBA, LP record, Executive, Murthy, Management

MONTREAL, QC, Feb. 5, 2024 /PRNewswire/ - Cycle Capital, a leading ClimateTech venture capital investment platform, is pleased to announce the addition of three new members to its Industrial Expert Advisory Committee (IEAC).

Key Points: 
  • MONTREAL, QC, Feb. 5, 2024 /PRNewswire/ - Cycle Capital, a leading ClimateTech venture capital investment platform, is pleased to announce the addition of three new members to its Industrial Expert Advisory Committee (IEAC).
  • They join Bertrand Gautier, Founding Partner at Schroders Greencoat Capital, already a member of Cycle Capital Fund IV advisory committee, along with current representatives from Cycle Capital's Limited Partners (LPs), to support Cycle Capital's team in its mission to scale deep tech companies developing enabling technologies in the transition to net zero.
  • "Murthy will support Cycle Capital and its portfolio companies with his commercial and engineering insights, as well as product design.
  • Raj and Jim will help Cycle Capital reinforce its expertise in semiconductors and industrial scaling up in microelectronics, a key component of Cycle Capital's Fund V's investment thesis.

PowerUP Asia 2024: Power Semiconductor Innovations Toward Green Goals

Retrieved on: 
Thursday, February 1, 2024
Silicon carbide, Power-up, Electronics, EE Times, Exhibition, Gallium nitride, Carbon, WBG, Communication, Engineering, Conference, Consumer electronics

TAIPEI, TW, Feb 1, 2024 - (ACN Newswire) - The continuous drive toward decarbonization is fueling power semiconductor innovations-whether in terms of materials, chip design, circuit topologies, or packaging.

Key Points: 
  • TAIPEI, TW, Feb 1, 2024 - (ACN Newswire) - The continuous drive toward decarbonization is fueling power semiconductor innovations-whether in terms of materials, chip design, circuit topologies, or packaging.
  • PowerUP Asia 2024 is a three-day virtual conference and exhibition highlighting the latest technology developments and trends in power electronics, including wide-bandgap (WBG) devices, power semiconductors, and related technologies, as manufacturers worldwide set their sights on power efficiency, carbon reduction, and greener energy.
  • Organized by
    Now on its second year, PowerUP Asia, to be held from May 21-23, 2024, will bring the latest developments in power semiconductor and engineering, and how the industry can explore ways to accelerate the pathway to net-zero carbon emissions.
  • Engineers specializing in power electronics, semiconductor technologies, like GaN and SiC, and renewable energy systems will find immense value.

Cadence Significantly Advances ECAD/MCAD Convergence for Electronic Systems with New Celsius Studio AI Thermal Platform

Retrieved on: 
Wednesday, January 31, 2024
Electronic Design Automation, Engineering, Semiconductor, Technology, Manufacturing, Software, Hardware, Multimedia, MMIC, Electronics, Workflow, RF, Optimality, Samsung Electronics, AWR, IC, Gallium nitride, BAE, CDNS, Simulation, Acquisition, Chiplet, Polychlorinated biphenyl, Algorithm, Studio, Cadence Design Systems, 3D-IC, PCB, Video game

Cadence Design Systems, Inc. (Nasdaq: CDNS) today announced Cadence® Celsius™ Studio, the industry’s first complete AI thermal design and analysis solution for electronic systems.

Key Points: 
  • Cadence Design Systems, Inc. (Nasdaq: CDNS) today announced Cadence® Celsius™ Studio, the industry’s first complete AI thermal design and analysis solution for electronic systems.
  • Celsius Studio addresses thermal analysis and thermal stress for 2.5D and 3D-ICs and IC packaging, in addition to electronics cooling for PCBs and complete electronic assemblies.
  • View the full release here: https://www.businesswire.com/news/home/20240131987413/en/
    The industry’s first complete AI thermal design and analysis solution for electronic systems, Cadence® Celsius™ Studio addresses thermal analysis and thermal stress for 2.5D and 3D-ICs and IC packaging, in addition to electronics cooling for PCBs and complete electronic assemblies.
  • Customers interested in gaining early access to Celsius Studio should contact their Cadence account representative.

JEDEC Wide Bandgap Power Semiconductor Committee Publishes a Milestone Document for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices

Retrieved on: 
Tuesday, January 30, 2024
Electronic Design Automation, Semiconductor, Consumer Electronics, Technology, Mobile, Wireless, Software, Hardware, Electronics, JEDEC, TDB, Transphorm, Gallium nitride, Guideline, Task, Quality, Medical device

JEDEC Solid State Technology Association , the global leader in the development of standards for the microelectronics industry, today announced the publication of JEP198: Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices.

Key Points: 
  • JEDEC Solid State Technology Association , the global leader in the development of standards for the microelectronics industry, today announced the publication of JEP198: Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices.
  • JEP198 presents guidelines for evaluating the Time Dependent Breakdown (TDB) reliability of GaN power transistors.
  • It is applicable to planar enhancement-mode, depletion-mode, GaN integrated power solutions, and cascode GaN power transistors.
  • This publication covers suggested stress conditions and related test parameters for evaluating the TDB reliability of GaN power transistors using the off-state bias.

Power Integrations Introduces InnoSwitch5 Offline Flyback Switcher IC

Retrieved on: 
Tuesday, January 30, 2024
Mobile, Wireless, Technology, Semiconductor, Other Technology, Telecommunications, Audio, Video, Networks, Hardware, Electronic Design Automation, Consumer Electronics, Multimedia, ICS, UFCS, PFC, Gallium nitride, ZVS, USB, CC, AHB, EPR, PD, Electric motor

Power Integrations (NASDAQ: POWI ), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced the release of the InnoSwitch™5-Pro family of high-efficiency, programmable flyback switcher ICs.

Key Points: 
  • Power Integrations (NASDAQ: POWI ), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced the release of the InnoSwitch™5-Pro family of high-efficiency, programmable flyback switcher ICs.
  • View the full release here: https://www.businesswire.com/news/home/20240130086519/en/
    Power Integrations Introduces InnoSwitch5-Pro Offline Flyback Switcher IC (Photo: Business Wire)
    Adnaan Lokhandwala, senior product marketing manager at Power Integrations, said: "The combination of ZVS and GaN is power supply magic.
  • Key markets for the InnoSwitch5-Pro family of flyback switcher ICs include high-density USB PD 3.1 Extended Power Range (EPR), UFCS and multi-protocol adapters, notebook adapters and after-market single- and multi-port chargers and adapters.
  • For further information, contact a Power Integrations sales representative or visit power.com .