JEDEC Wide Bandgap Power Semiconductor Committee Publishes a Milestone Document for Bias Temperature Instability of Silicon Carbide (SiC) MOS Devices
b'JEDEC Solid State Technology Association , the global leader in standards development for the microelectronics industry, announces the publication of JEP184: Guideline for Evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor (MOS) Devices for Power Electronic Conversion.
- b'JEDEC Solid State Technology Association , the global leader in standards development for the microelectronics industry, announces the publication of JEP184: Guideline for Evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor (MOS) Devices for Power Electronic Conversion.
- This publication provides guidelines for stress procedures being able to distinguish between different shift components and allowing measurement of their stability over time as affected by gate bias and temperature.
- JEP184 also closely follows the recent JEDEC publication of JEP183: Guidelines for Measuring the Threshold Voltage (VT) of SiC MOSFETs.
- Committee members include industry leaders in power GaN and SiC semiconductors, as well as users of wide bandgap power devices, and test and measurement equipment suppliers.