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Transphorm to Announce Third Quarter Fiscal 2022 Financial Results and Host Business Update Call on February 9

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火曜日, 2月 1, 2022

Technology, Hardware, Semiconductor, View, AEC, WeChat, Silicon, Internet, Twitter, Efficiency, Investor relations, Gallium nitride, Company, JEDEC, Electronics, Traction, ID, Mobile phone, Transphorm

The Company will host a business update conference call at 2:00 p.m. Pacific Time on the same day to discuss its most recent progress and continued traction in its target end markets.

Key Points:

The Company will host a business update conference call at 2:00 p.m. Pacific Time on the same day to discuss its most recent progress and continued traction in its target end markets.
Additionally, a telephone replay of the conference call will be available approximately two hours after the conclusion of the call and through February 16, 2022.
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications.
The Companys vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support.

Transphorm Ships Over One Million GaN Devices for Fast Chargers and Power Adapters in December 2021

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水曜日, 1月 12, 2022

Transphorms SuperGaN product family for compact power conversion applications currently includes three 650 V devices: 480 m FETs, 300 m FETs, and 150 m FETs.

Key Points:

Transphorms SuperGaN product family for compact power conversion applications currently includes three 650 V devices: 480 m FETs, 300 m FETs, and 150 m FETs.
These devices are offered in standard PQFN 5x6 and 8x8 packages and meet JEDEC qualification standards at 150C.
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications.
Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industrys first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices.

Transphorm to Present at the Needham Growth Conference on January 12

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木曜日, 1月 6, 2022

Management is scheduled to present at 11:00 a.m. Pacific Time on Wednesday, January 12, 2022 and will be available throughout the day to meet with investors.

Key Points:

Management is scheduled to present at 11:00 a.m. Pacific Time on Wednesday, January 12, 2022 and will be available throughout the day to meet with investors.
Portfolio managers and analysts who would like to request a meeting with management should email [email protected] or contact their Needham representative.
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications.
Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.

Transphorm Closes $12.9 Million Non-Brokered Private Placement of Common Stock

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月曜日, 12月 13, 2021

In connection with the financing, Transphorm issued warrants to purchase an aggregate of 348,649 shares of common stock at an exercise price of $9.25 per share.

Key Points:

In connection with the financing, Transphorm issued warrants to purchase an aggregate of 348,649 shares of common stock at an exercise price of $9.25 per share.
As result of this financing, Transphorm has now closed $45.9 million of equity financings in the past two months.
Transphorm continues to pursue its previously announced plans to uplist shares of the Companys common stock on Nasdaq.
Transphorm has agreed to file a registration statement with the Securities and Exchange Commission registering the resale of the shares of common stock issued and sold in the private placement within 30 days of the closing of the private placement.

Transphorm Co-Founder and CTO Umesh Mishra Awarded IEEE Jun-ichi Nishizawa Medal

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木曜日, 12月 9, 2021

Transphorm, Inc. (OTCQX: TGAN)a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion productsannounced that its co-founder and CTO Umesh Mishra, Ph.D. was awarded the IEEE Jun-ichi Nishizawa Medal.

Key Points:

Transphorm, Inc. (OTCQX: TGAN)a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion productsannounced that its co-founder and CTO Umesh Mishra, Ph.D. was awarded the IEEE Jun-ichi Nishizawa Medal.
This is the second IEEE award received by him, the first being the IEEE David Sarnoff Award for the development of GaN electronics.
He continued researching and developing GaN-based solutions, expanding focus to high voltage power conversion applications and, in 2007, co-founded Transphorm.
With Umesh as CTO, Transphorm continues to advance GaN power conversion solutions, setting the bar for high reliability and performance through smart innovation.

Discover Japan’s Ultimate Relaxation Spots With Japan National Tourism Organization (JNTO)

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水曜日, 12月 8, 2021

Through its Enjoy my Japan campaign, JNTO is introducing a variety of destinations that will allow future visitors to the country plenty of relaxation opportunities once travel restrictions are lifted.

Key Points:

Through its Enjoy my Japan campaign, JNTO is introducing a variety of destinations that will allow future visitors to the country plenty of relaxation opportunities once travel restrictions are lifted.
In this article we highlight a few off-the-beaten-path attractions throughout Japan that will leave overseas visitors feeling refreshed and recharged.
Taketomi is a traditional ryukyu-style village, where water buffalos roam and houses with red-tiled roofs are enclosed by stone walls.
For more content for your articles and story ideas, visit Japan Online Media Center (JOMC) .

Transphorm to Present at the Oppenheimer 5G Summit on December 14

Retrieved on:

火曜日, 12月 7, 2021

Networks, Semiconductor, Hardware, Data Management, Technology, Cloud, Electronics, Twitter, AEC, Oppenheimer, JEDEC, WeChat, Investor relations, Efficiency, Gallium nitride, Silicon, OTCQX

Portfolio managers and analysts who would like to request a meeting with management should contact their Oppenheimer representative.

Key Points:

Portfolio managers and analysts who would like to request a meeting with management should contact their Oppenheimer representative.
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications.
Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.
The SuperGaN mark is a registered mark of Transphorm, Inc. All other trademarks are the property of their respective owners.

Transphorm Releases Second Totem Pole Evaluation Board with Microchip’s Digital Signal Processing Technology

Retrieved on:

火曜日, 11月 30, 2021

Transphorm, Inc. (OTCQX: TGAN)a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion productstoday announced the expansion of its design tools using digital signal processing technology from Microchip Technology .

Key Points:

Transphorm, Inc. (OTCQX: TGAN)a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion productstoday announced the expansion of its design tools using digital signal processing technology from Microchip Technology .
The TDTTP2500B066B-KIT is a 2.5 kW AC-to-DC bridgeless totem pole power factor correction (PFC) evaluation board.
It pairs Transphorms SuperGaN FETs with Microchips dsPIC33CK digital signal controller (DSC) board, which includes pre-programmed firmware that can be easily customized per end application requirements.
The new board also introduces an advanced feature to increase its usability: swappable daughter cards housing Transphorms GaN devices.

Transphorm’s SuperGaN Gen IV Multi-Kilowatt Class Power FET Earns Automotive Qualification

Retrieved on:

水曜日, 11月 10, 2021

As with its Gen III predecessor, the Gen IV TP65H035G4WSQA device is qualified to 175C.

Key Points:

As with its Gen III predecessor, the Gen IV TP65H035G4WSQA device is qualified to 175C.
Omdia believes that the early adoption of GaN transistors within the multibillion-dollar automotive market could pass $100 million by 2025.
The automotive qualification of their SuperGaN Gen IV device is just one more proof point.
Transphorms innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost.

Sino-American Silicon Products (SAS) Makes $15 Million Investment in Transphorm as Part of a New Strategic Partnership

Retrieved on:

水曜日, 11月 10, 2021

(based on Nov-9 stock price)

Key Points:

(based on Nov-9 stock price)
In addition, SAS has made a US$15 Million equity investment into Transphorm, which includes its initial $5 Million investment in Transphorm in August.
Through the new strategic partnership, Transphorm plans to significantly enhance the supply chain for GaN epiwafers.
Additionally, SAS will become a distributor for select Transphorm epiwafer products as well as power products, that will boost the growth of Transphorms GaN product sales.
Commenting on the announcement, Doris Hsu, Chairwoman and CEO, SAS/GWC stated, We are excited to become shareholders of Transphorm as we begin our new GaN strategic partnership.